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| SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION *With TO-126 package *Complement to type 2SA963 *High collector power dissipation APPLICATIONS *For low-frequency power amplification PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base 2SC2209 Absolute Maximun Ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 50 40 5 1.5 3 10 150 -55~150 UNIT V V V A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=2mA;IB=0 IC=1mA ;IE=0 IC=1.5A ;IB=150mA IC=2A ;IB=0.2A VCB=20V; IE=0 VCE=10V; IB=0 VEB=5V; IC=0 IC=1A ; VCE=5V IE=0 ; VCB=5V;f=1MHz IC=0.5A ; VCB=5V,f=200MHz 80 MIN 40 50 2SC2209 SYMBOL V(BR)CEO V(BR)CBO VCEsat VBEsat ICBO ICEO IEBO hFE COB fT TYP. MAX UNIT V V 1.0 1.5 1 100 10 220 50 150 V V A A A pF MHz hFE Classifications Q 80-160 R 120-220 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2209 Fig.2 Outline dimensions 3 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2209 4 |
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